PART |
Description |
Maker |
M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 ST Microelectronics
|
M27V402 |
NND - 4 MBIT (256KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
M27W402-100K6 |
4 MBIT (256KB X16) LOW VOLTAGE OTP EPROM
|
ST Microelectronics
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4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85 Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85 4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM From old datasheet system 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M36W416TG85ZA1T M36W416TG70ZA6T M36W416TG-ZAT M36W |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product CANMS3470L16-23PL/C 16兆x16插槽,开机区块快闪记忆体Mbit的SRAM56Kb x16,内存产品多
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意法半导 STMicroelectronics N.V.
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M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M29W400DT M29W400DT45M1E M29W400DT45M1F M29W400DT4 |
4 Mbit (512Kb x8 or 256Kb x16 Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory 4兆位12KB的x856Kb的x16插槽,引导块V电源快闪记忆
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
|
M27W201-80K6TR M27W201-200NZ6TR M27W201-80NZ6TR M2 |
2 MBIT (256KB X8) LOW VOLTAGE OTP EPROM Test Spring Probe; Current Rating:3A; Leaded Process Compatible:Yes; Length:0.060"; Peak Reflow Compatible (260 C):No; Tip/Nozzle Style:90 Concave RoHS Compliant: Yes 2兆位56Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储 Triple 3-Input Positive-AND Gates 14-SO 0 to 70 Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SO 0 to 70 Triple 3-Input Positive-AND Gates 14-PDIP 0 to 70 Triple 3-Input Positive-AND Gates 14-SOIC 0 to 70 Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70 Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM 2 MBIT (256KB X8) LOW VOLTAGE OTP EPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M36W416TG 9175 M36W416TGZA M36W416BG70ZA1T M36W416 |
From old datasheet system 16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
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STMICROELECTRONICS[STMicroelectronics]
|
M27W202-100K6 |
2 MBIT (128KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
M27C322 6184 |
32 Mbit (2Mb x16) UV EPROM and OTP EPROM From old datasheet system
|
STMicro
|
M27C322 |
32 MBIT (2MB X16) UV EPROM AND OTP EPROM
|
ST Microelectronics
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